Elevate Your Projects: High-Quality Silicon Thermal Oxide Wafers for Demanding Applications

Silicon thermal oxide wafers are a type of semiconductor wafer that is used in a variety of electronic devices. They are made from high-purity silicon and have a thin layer of silicon dioxide (SiO2) on the surface. The Diced silicon wafer with a dry oxide coating is grown using a thermal oxidation process, which creates a uniform and stable oxide layer. 

Silicon thermal oxide wafers are used in a variety of applications, including: Gate oxides in transistors:

 The SiO2 layer acts as an insulator between the gate electrode and the channel region of the transistor. This is essential for the proper operation of the transistor.

 Passivation layers: The SiO2 layer can be used to protect the underlying silicon from contaminants and corrosion. 

Dielectric layers in capacitors: The SiO2 layer can be used as the dielectric layer in capacitors. Capacitors are used to store electrical energy.

 Alpha Nanotech offers Diced silicon wafer with a dry oxide coating in a variety of standard sizes and thicknesses. They also offer custom sizes and thicknesses to meet the specific needs of their customers.

P-type Boron-doped 200nm SiO2 thermal oxide wafer

 The thickness of the P-type Boron-doped 200nm SiO2 thermal oxide wafer is an important parameter that affects the electrical properties of the wafer. For example, the capacitance of a capacitor is inversely proportional to the thickness of the oxide layer. Therefore, the choice of oxide thickness will depend on the specific application of the wafer.

 Here are some additional details about the different thicknesses of silicon thermal oxide wafers: 100 nm: 

This is a relatively thin oxide layer that is often used in high-performance transistors. It offers good electrical properties, but it is also more susceptible to leakage currents.

 200 nm: This is a more common thickness for silicon thermal oxide wafers. It offers a good balance of electrical properties and reliability. 

300 nm: This is a thicker oxide layer that is often used in applications where high voltage is required. It is also more resistant to leakage currents. 

500 nm and 1000 nm: These are even thicker oxide layers that are used in specialized applications, such as high-voltage capacitors and power devices.