Blog #SiO2 thermal oxide wafer

We give warm oxide wafer in measurement from 2" to 12 " , we generally pick prime evaluation and imperfection free P-type Boron- doped 200nm SiO2 thermal oxide wafer as substrate for developing high consistency warm oxide layer to meet your particular necessities . Reach us for additional data on cost and conveyance time.

Diced silicon wafer with a dry oxide coating have been used luxuriously in microelectronics and MEMS as a phase for produce. An entrancing assortment of the standard Diced silicon wafer with a dry oxide covering is the SOI substrate.