Blog #Diced silicon wafer

We give warm oxide wafer in measurement from 2" to 12 " , we generally pick prime evaluation and imperfection free P-type Boron-doped 200nm SiO2 thermal oxide wafer as substrate for developing high consistency warm oxide layer to meet your particular necessities . Reach us for additional data on cost and conveyance time.

Silicon wafers have been utilized richly in microelectronics and MEMS as a stage for manufacture. A fascinating variety of the standard Diced silicon wafer with a dry oxide coating is the SOI substrate. To deliver these wafers, two silicon wafers are reinforced together, utilizing silicon dioxide of around 1�2 �m thickness as a bond layer. One of the silicon wafers is weakened to a thickness of 10�50 �m.

Silicon wafers have been utilized richly in microelectronics and MEMS as a stage for manufacture. A fascinating variety of the standard Diced silicon wafer with a dry oxide coating is the SOI substrate. To deliver these wafers, two silicon wafers are reinforced together, utilizing silicon dioxide of around 1�2 �m thickness as a bond layer. One of the silicon wafers is weakened to a thickness of 10�50 �m.

Diced silicon wafer with a dry oxide coating can come in very handy on the use. As the second most common material located in this universe, silicon has really managed to cover a very long distance. It has managed to influence our lives in different ways.

We give warm oxide wafer in measurement from 2" to 12 " , we generally pick prime evaluation and imperfection free P-type Boron-doped 200nm SiO2 thermal oxide wafer as substrate for developing high consistency warm oxide layer to meet your particular necessities . Reach us for additional data on cost and conveyance time.